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The synthesis and photoluminescence properties of selenium-treated porous silicon nanowire arrays

机译:硒处理的多孔硅纳米线阵列的合成与光致发光性质

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Here we prepared vertical and single crystalline porous silicon nanowire (SiNW) arrays using the silver-assisted electroless etching method. The selenization was carried out by annealing the samples in vacuum with selenium atmosphere. The selenization treatment at 700°C is useful for investigating the photoluminescence (PL) properties of porous SiNWs, with an enhancement of 30 times observed. The observed PL peaks blue-shift to 650 nm and the decomposition of the spectrum reveals that three PL bands with different origins are obtained. It is proved that selenization treatment could remove the Si-H bonds on the surface and form Si-Se bonds, which could increase the absorbance of the SiNWs and also enhance the stability of the PL intensity. These Se-treated porous SiNWs may be useful as nanoscale optoelectronic devices.
机译:在这里,我们使用银辅助化学蚀刻方法制备了垂直和单晶多孔硅纳米线(SiNW)阵列。硒化是通过在硒气氛中真空退火样品来进行的。 700℃下的硒化处理可用于研究多孔SiNW的光致发光(PL)性能,观察到增强了30倍。观察到的PL峰蓝移至650 nm,光谱的分解表明获得了三个具有不同起源的PL谱带。事实证明,硒化处理可以去除表面的Si-H键,形成Si-Se键,增加SiNWs的吸收,增强PL强度的稳定性。这些经Se处理的多孔SiNW可以用作纳米级光电器件。

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