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The fabrication of tunable nanoporous oxide surfaces by block copolymer lithography and atomic layer deposition

机译:通过嵌段共聚物光刻和原子层沉积制备可调节的纳米多孔氧化物表面

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摘要

Patterned nanoscale materials with controllable characteristic feature sizes and periodicity are of considerable interest in a wide range of fields, with various possible applications ranging from biomedical to nanoelectronic devices. Block-copolymer (BC)-based lithography is a powerful tool for the fabrication of uniform, densely spaced nanometer-scale features over large areas. Following this bottom-up approach, nanoporous polymeric films can be deposited on any type of substrate. The nanoporous periodic template can be transferred to the underlying substrate by dry anisotropic etching. Nevertheless the physical sizes of the polymeric mask represent an important limitation in the implementation of suitable lithographic protocols based on BC technology, since the diameter and the center-to-center distance of the pores cannot be varied independently in this class of materials. This problem could be overcome by combining block copolymer technology with atomic layer deposition (ALD): by means of BC-based lithography a nanoporous SiO_2 template, with well-reproducible characteristic dimensions, can be fabricated and subsequently used as a backbone for the growth of perfectly conformal thin oxide films by ALD. In this work polystyrene-b-poly(methylmethacrylate) (PS-b-PMMA) BC and reactive ion etching are used to fabricate hexagonally packed 23nm wide nanopores in a 50nm thick SiO_2 matrix. By ALD deposition of Al _2O_3 thin films onto the nanoporous SiO_2 templates, nanostructured Al_2O_3 surfaces are obtained. By properly adjusting the thickness of the Al_2O_3 film the dimension of the pores in the oxide films is progressively reduced, with nanometer precision, from the original size down to complete filling of the pores, thus providing a simple and fast strategy for the fabrication of nanoporous Al_2O_3 surfaces with well-controllable feature size.
机译:具有可控制的特征尺寸和周期性的图案化的纳米级材料在广泛的领域中引起了极大的兴趣,具有从生物医学到纳米电子器件的各种可能的应用。基于嵌段共聚物(BC)的光刻技术是在大面积上制造均匀,密集纳米尺寸特征的强大工具。按照这种自下而上的方法,可以将纳米多孔聚合物膜沉积在任何类型的基材上。可以通过干法各向异性蚀刻将纳米孔周期性模板转移到下面的基底上。然而,由于在这类材料中不能独立地改变孔的直径和中心距,因此聚合物掩模的物理尺寸代表了在实施基于BC技术的合适光刻方案中的重要限制。可以通过将嵌段共聚物技术与原子层沉积(ALD)相结合来克服此问题:借助基于BC的光刻技术,可以制造出具有良好可复制的特征尺寸的纳米多孔SiO_2模板,然后将其用作骨生长的骨架。通过ALD完美保形的氧化膜。在这项工作中,聚苯乙烯-b-聚(甲基丙烯酸甲酯)(PS-b-PMMA)BC和反应离子刻蚀用于在50nm厚的SiO_2基体中制造六角形堆积的23nm宽的纳米孔。通过在纳米多孔SiO_2模板上ALD沉积Al _2O_3薄膜,得到纳米结构的Al_2O_3表面。通过适当地调节Al_2O_3膜的厚度,以纳米精度逐渐减小了氧化膜中孔的尺寸,从原始尺寸减小到孔的完全填充,从而为制造纳米孔提供了一种简单而快速的策略Al_2O_3表面具有可控制的特征尺寸。

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