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Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

机译:从准一维范德华晶体直接制备功能超薄单晶纳米线

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摘要

Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 11) van der Waals materials, possibly opening a new arena for ID material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta-2(Pd or Pt)(3)Se-8 system by simple micromecharAcal exfoliation. Exfoliated Ta2Pd3Se8 nanowires are a-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both in-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Wags bulk compound, our findings about the exfoliated Ta-2(Pd or Pt)(3)Se-8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.
机译:二维(2D)van der Waals材料的微机械剥离引起了人们对2D材料研究的极大兴趣。这个想法扩展到11)van der Waals材料,可能为ID材料研究开辟新的领域,但尚未实现。在本文中,我们证明了通过简单的微分子剥离,可以轻松地在Ta-2(Pd或Pt)(3)Se-8系统中实现尺寸仅为6条分子带的一维纳米线。脱落的Ta2Pd3Se8纳米线是a型半导体,而同构Ta2Pt3Se8纳米线是p型半导体。两种类型的纳米线都具有出色的电开关性能,作为场效应晶体管的沟道材料。低温传输测量揭示了Ta2Pd3Se8纳米线固有的缺陷水平,这使得在高温(140 K以上)下观察到的电开关行为成为可能。由in型Ta2Pd3Se8和p型Ta2Pt3Se8场效应晶体管组成的功能逻辑门也已成功实现。通过利用从范德瓦格斯母体化合物中获得的高质量晶体,我们关于剥落的Ta-2(Pd或Pt)(3)Se-8纳米线的发现证明了一种新的途径可以访问单晶1D纳米结构研究它们的基本特性,并探索它们在电子,光电和能量收集中的应用。

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