Modification of doping front migration in electrochemical devices and application to organic electronics

摘要

We demonstrate several methods of modifying the doping front migration process in multilayer structures, enabling control of migration velocity and switching between different migration mechanisms. Sharp jumps in migration velocity may be induced using a delamination effect. The influence of migration layer thickness and composition is examined. Migration velocity may also be influenced by exposing the system to a defined relative humidity or by varying the concentration of a hygroscopic salt in the migration layer. The migration mechanisms can be explained in terms of diffusion, capillary transport, and delamination. By tailoring the migration process a variety of polymer electronic structures such as pseudo transistors (enhancement and depletion type) and electrical switches (ON-OFF and OFF-ON) may be fabricated. Further examinations about the doping front width are given and the phenomenon of a double front is described.