Towards self-aligned nanostructures by means of layer-expansion technique

摘要

A new and simple nanostructuring method that combines the conventional photolithography and layer expansion or pattern-size reduction technique is presented. The method is based on a complete conversion of a photolithographically patterned metal layer to a metal-oxide mask with improved pattern-size resolution using the thermal oxidation process. The mask can be further applied for the fabrication of different nanostructures and nano-devices.