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首页> 外文期刊>Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics >Use of molecular electrostatic potential at the carbene carbon as a simple and efficient electronic parameter of N-heterocyclic carbenes
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Use of molecular electrostatic potential at the carbene carbon as a simple and efficient electronic parameter of N-heterocyclic carbenes

机译:卡宾碳分子静电势作为N杂环卡宾的简单有效电子参数的使用

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Topographical analysis of the molecular electrostatic potential (MESP) has been carried out for a variety of N-heterocyclic carbenes at the B3LYP, BP86, and M05 levels of density functional theory (DFT) using a 6-311++G **basis set. The electron rich character of the carbene carbon is assessed in terms of the absolute minimum of the MESP at the carbene lone pair region (V_(min)), as well as the MESP at the carbene nucleus (V _C). A linear relationship is established between the V_C and Tolman electronic parameter (TEP) which suggested the use of the former as a simple and efficient descriptor for the electron donating power of N-heterocyclic carbene ligands toward metal coordination. The V_(min) of the carbene also showed good correlation with TEP. However, the deviation from linearity was higher than V_C-TEP correlation, and the reason for this was attributed to the steric effect of N-substituents at the lone pair region. The greater coordinating power of N-heterocyclic carbenes over phosphines is explained on the basis of deeper V_(min) values obtained for the former, and in fact even the V_(min) of the least electron rich N-heterocyclic carbene is comparable to the highly electron rich phosphine ligands. Thus the MESP topographical approach presented herein offers quantification of the inherent electron donating power of a free N-heterocyclic carbene ligand.
机译:使用6-311 ++ G **基集,对密度函数理论(DFT)的B3LYP,BP86和M05级别的各种N-杂环卡宾进行了分子静电势(MESP)的形貌分析。 。卡宾碳的富电子特性通过卡宾孤对区的MESP的绝对最小值(V_(min))和卡宾核的MESP的绝对最小值(V _C)进行评估。在V_C和Tolman电子参数(TEP)之间建立了线性关系,这建议使用前者作为N杂环卡宾配体对金属配位的电子给体能力的简单有效的描述符。卡宾的V_(min)也显示与TEP良好的相关性。然而,线性度的偏差高于V_C-TEP相关性,其原因归因于孤对区的N-取代基的空间效应。 N-杂环卡宾对膦的更大配位能力是基于前者获得的更深的V_(min)值来解释的,实际上,即使是最富电子的N-杂环卡宾的V_(min)也可与高度富电子的膦配体。因此,本文提出的MESP形貌方法提供了对游离N-杂环卡宾配体的固有给电子能力的定量。

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