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Self-Assembled DNA Monolayer Buffered Dynamic Ranges of Mercuric Electrochemical Sensor

机译:自组装DNA单层汞电化学传感器的缓冲动态范围

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Sensors with wide dynamic ranges (DRs) are typically constructed by utilizing a set of ligands with varied affinities for the same target. We report here a novel buffer self-assembled monolayer (BSAM) strategy, to fabricate sensors with extraordinarily broad DRs using a single recognition ligand. We demonstrated the concept of BSAM by constructing the electrochemical mercuric sensors with different surface probe densities (SPD) on a gold electrode. These sensors are based on the coordination of Hg~(2+) with a pair of thymine (T) formed between the two proximate poly(T) oligonucleotides on the electrode surface and Hg~(2+) binding induced DNA strand displacement of ferrocene tagged poly(A). There are three types of T-Hg~(2+)-T coordination: those formed between (a) two poly(T) strands where none are hybridized with poly(A) strands, thus contributing zero effect on releasing the signaling probe, (b) poly(A)/poly(T) hybridized and nonhybridized poly(T) strands, resulting in the release of a signaling probe from the surface; and (c) two poly(A)/poly(T) hybridized strands, causing the release of two signaling probes from the surface. The DRs from 10 pM to 0.1 mM at varied SPDs were observed, attributing to the tunable Hg~(2+) storage capability of the poly(T) SAM formed on the surface due to the coordination mechanism of (a) and (b). The DR was able to be further extended to 1 mM by using the longer poly(T) strands. The ready-to-use sensor exhibited great selectivity against the common interferential metal ions. As demonstrated, the BSAM strategy is a facile way to fabricate sensors with tunable and wide DRs.
机译:通常通过利用一组对同一目标具有不同亲和力的配体来构建具有宽动态范围(DR)的传感器。我们在这里报告一种新颖的缓冲区自组装单层(BSAM)策略,以使用单个识别配体来制造具有超宽DR的传感器。我们通过在金电极上构建具有不同表面探针密度(SPD)的电化学汞传感器,证明了BSAM的概念。这些传感器基于Hg〜(2+)与在电极表面上两个邻近的poly(T)寡核苷酸之间形成的一对胸腺嘧啶(T)的配位以及Hg〜(2+)结合诱导的二茂铁DNA链置换标记的poly(A)。 T-Hg〜(2 +)-T配位共有三种类型:(a)在两条不与poly(A)链杂交的多聚(T)链之间形成的配位,因此对释放信号探针的作用为零, (b)聚(A)/聚(T)杂交和非杂交的聚(T)链,导致信号探针从表面释放; (c)两条聚(A)/聚(T)杂交链,导致两个信号探针从表面释放。观察到在不同的SPD下DR从10 pM到0.1 mM,这归因于(a)和(b)的配位机制,形成在表面的poly(T)SAM的Hg〜(2+)可调节的存储能力。 。通过使用更长的poly(T)链,DR可以进一步扩展到1 mM。即用型传感器对常见的干扰金属离子表现出极大的选择性。如图所示,BSAM策略是一种制造具有可调宽DR的传感器的简便方法。

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