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Compositional Analysis of Electrodeposited Bismuth Telluride Thermoelectric Thin Films Using Combined Electrochemical Quartz Crystal Microgravimetry-Stripping Voltammetry

机译:电化学石英晶体微重力-溶出伏安法测定电沉积碲化铋热电薄膜的成分分析

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摘要

Bismuth telluride (Bi_(2)Te_(3)) is a benchmark material for thermoelectric power generation and cooling applications. Electrodeposition is a versatile technique for preparing thin films of this material; however, it affords films of variable composition depending on the preparation history. A simple and rapid assay of electrodeposited films, therefore, has both fundamental and practical importance. In this study, a new protocol for the electroanalysis of Bi_(2)Te_(3) thin films is presented by combining the two powerful and complementary techniques of electrochemical quartz crystal microgravimetry (EQCM) and stripping voltammetry. First, any free (and excess) tellurium in the electrodeposited film was reduced to soluble Te~(2-) species by scanning to negative potentials in a 0.1 M Na_(2)SO_(4) electrolyte, and the accompanying frequency increase (mass loss) was used to determine the content of free tellurium. The film was again subjected to cathodic stripping in the same medium (to generate Bi~(o) and soluble Te~(2-) from the Bi_(2)Te_(3) film component of interest), and the EQCM frequency change was used to determine the content of chemically bound Te in the Bi_(2)Te_(3) thin film and thereby the compound stoichiometry. Finally, the EQCM frequency change during Bi oxidation to Bi~(3+) and the difference between total Bi and Bi in Bi_(2)Te_(3) resulted in the assay of free (excess) Bi in the electrodeposited film. Problems associated with the chemical/electrochemical stability of the free Bi species were circumvented by a flow electroanalysis approach. Data are also presented on the sensitivity of electrodeposited Bi_(2)Te_(3) film composition to the electrodeposition potential. This newly developed method can be used for the compositional analysis of other thermoelectric thin-film material candidates in general.
机译:碲化铋(Bi_(2)Te_(3))是热电发电和冷却应用的基准材料。电沉积是一种制备这种材料薄膜的通用技术。但是,根据制备历史,它可以提供组成可变的薄膜。因此,对电沉积膜进行简单而快速的测定具有根本和实际的重要性。在这项研究中,通过结合电化学石英晶体微重力法(EQCM)和溶出伏安法的两种强大且互补的技术,提出了一种用于Bi_(2)Te_(3)薄膜电分析的新协议。首先,通过在0.1 M Na_(2)SO_(4)电解质中扫描至负电位,将电沉积膜中的任何游离(和过量)碲还原为可溶的Te〜(2-)物种,并且伴随的频率增加(质量损失)用于确定游离碲的含量。将该膜再次在相同的介质中进行阴极剥离(从感兴趣的Bi_(2)Te_(3)膜组分生成Bi〜(o)和可溶性Te〜(2-)),EQCM频率变化为用于确定Bi_(2)Te_(3)薄膜中化学键合的Te的含量,从而确定化合物的化学计量。最后,在Bi氧化成Bi〜(3+)期间EQCM频率变化以及Bi_(2)Te_(3)中Bi的总Bi与Bi之间的差异导致了电沉积膜中游离(过量)Bi的测定。流式电分析方法规避了与游离Bi物种的化学/电化学稳定性有关的问题。还提供了有关电沉积Bi_(2)Te_(3)薄膜成分对电沉积电位的敏感性的数据。通常,这种新开发的方法可用于其他热电薄膜材料候选材料的成分分析。

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