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BISMUTH TELLURIDE THIN FILM PRODUCTION METHOD AND BISMUTH TELLURIDE THIN FILM

机译:碲化铋薄膜的生产方法及碲化铋薄膜的生产方法

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing both p-type and n-type BiTethin films by a production process as common as possible.SOLUTION: A p-type and an n-type are manufactured separately, by adjusting the RF power applied at the time of sputtering, by using a single Bi2Te3 target, by magnetron sputtering. The conduction type of a bismuth telluride thin film is made p-type, by applying a high frequency sputtering power, where the composition of tellurium in the bismuth telluride thin film exceeds 50 atom%. It is not required to heat a substrate on which the BiTethin film is formed.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种通过尽可能通用的生产工艺制造p型和n型BiTethin薄膜的方法。解决方案:通过调节RF功率分别制造p型和n型在溅射时,通过使用单个Bi2Te3靶,通过磁控溅射进行喷涂。通过施加高频溅射功率,碲化铋铋薄膜的导电类型为p型,其中碲化铋铋薄膜中的碲的组成超过50原子%。不需要加热在其上形成BiTethin膜的基板。选定的图:图1

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