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Effect of the Debye screening length on NW-FET sensors

机译:德拜屏蔽长度对NW-FET传感器的影响

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摘要

Nanowire field-effect transistor (NW-FET) sensors detect unlabeled species by their intrinsic charge. When an analyte binds to the NW-FET surface, the electric field around the device is modified, permitting detection. However, for optimal performance, the effect of molecular charge screening, known as the Debye screening length (lambda_D), has to be understood. Mark Reed, Tarek Fahmy, and colleagues at Yale University and the Howard Hughes Medical Institute have described how lambda_D influences NW-FET sensors.
机译:纳米线场效应晶体管(NW-FET)传感器通过其固有电荷检测未标记的物质。当分析物结合到NW-FET表面时,器件周围的电场会被修改,从而可以进行检测。但是,为了获得最佳性能,必须了解分子电荷筛选的效果,称为德拜筛选长度(lambda_D)。耶鲁大学和霍华德·休斯医学研究所的Mark Reed,Tarek Fahmy及其同事描述了lambda_D如何影响NW-FET传感器。

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