High-Performance Hole-Extraction Layer of Sol-Gel-Processed NiO Nanocrystals for Inverted Planar Perovskite Solar Cells

摘要

Hybrid organic/inorganic perovskite solar cells have been rapidly evolving with spectacular successes in both nanostructured and thin-film versions. Herein, we report the use of a simple sol-gel-processed NiO nanocrystal (NC) layer as the hole-transport layer in an inverted perovskite solar cell. The thin NiO NC film with a faceted and corrugated surface enabled the formation of a continuous and compact layer of well-crystallized CH3NH3PbI3 in a two-step solution process. The hole-extraction and -transport capabilities of this film interfaced with the CH3NH3PbI3 film were higher than those of organic PEDOT:PSS layers. The cell with a NiO NC film with a thickness of 30-40nm exhibited the best performance, as a thinner layer led to a higher leakage current, whereas a thicker layer resulted in a higher series resistance. With the NiO film, we observed a cell efficiency of 9.11%, which is by far the highest reported for planar perovskite solar cells based on an inorganic hole-extracting layer.