Tin(II) selenide is an important binary IV-VI semiconductor compound with a wide range of potential applications (e.g. memory switching devices, infrared optoelectronic devices, and anode materials for rechargeable lithium batteries). Bulk SnSe has both an indirect band gap at 0.90 eV and a direct band gap at 1.30 eV. Owing to the quantum confinement effect, tunable band gaps of SnSe nanostructured materials (e.g. thin films and nanocrystals) have been demonstrated, which makes them capable of absorbing a major portion of solar energy. As an earth-abundant, environmentally benign, and chemically stable material, SnSe is placed among the most promising candidates for solarcells.
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