首页> 外文期刊>ACS applied materials & interfaces >Enhanced ZT of InxCo4Sb12-InSb Nanocomposites Fabricated by Hydrothermal Synthesis Combined with Solid-Vapor Reaction: A Signature of Phonon-Glass and Electron-Crystal Materials
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Enhanced ZT of InxCo4Sb12-InSb Nanocomposites Fabricated by Hydrothermal Synthesis Combined with Solid-Vapor Reaction: A Signature of Phonon-Glass and Electron-Crystal Materials

机译:水热合成与固相气相反应制备InxCo4Sb12-InSb纳米复合材料的增强ZT:声子玻璃和电子晶体材料的标志

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摘要

A rapid route of synthesizing pristine Co4Sb12 at relatively low temperature was previously developed. However, filling the voids using the same procedure is not successful. We develop a new route to fabricate In-filled cobalt skutterudites with InSb nanoinclusions InxCo4Sb12-(InSb)(y) via solid vapor reaction between hydrothermally synthesized Co4Sb12 powder and the indium chunk. The nanocomposites are characterized using powder X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and inductively coupled plasma mass spectrometry (ICP-MS). With the success of partial filling of In into the voids and InSb nanoinclusions, the power factor of the InxCo4Sb12-(InSb)(y) nanocomposites is significantly enhanced, and the thermal conductivity is lowered as compared with the pristine Co4Sb12. As a result, ZT with its highest value of 1.0 is attained for the hierarchical structured In0.04Co4Sb12-(InSb)(0.05) nanocomposite at 575 K. The attained ZT value is among the highest ever reported value at T <= 575 K for In-filled cobalt skutterudites.
机译:先前已经开发了在相对较低的温度下合成原始Co4Sb12的快速途径。但是,使用相同的步骤填充空隙并不成功。我们开发了一条新途径,通过水热合成的Co4Sb12粉末与铟块之间的固相蒸气反应,制备具有InSb纳米夹杂物InxCo4Sb12-(InSb)(y)的填充钴方钴矿。使用粉末X射线衍射,场发射扫描电子显微镜,透射电子显微镜,能量色散X射线光谱和电感耦合等离子体质谱(ICP-MS)对纳米复合材料进行表征。随着将In部分填充到空隙和InSb纳米夹杂物中的成功完成,与原始Co4Sb12相比,InxCo4Sb12-(InSb)(y)纳米复合材料的功率因数显着提高,导热系数降低。结果,分层结构的In0.04Co4Sb12-(InSb)(0.05)纳米复合材料在575 K处获得最高1.0的ZT。在Z值为T <= 575 K时,所获得的ZT值是有史以来最高的。填充钴方钴矿。

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