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Surface Grafting of Functionalized Poly(thiophene)s Using Thiol-Ene Click Chemistry for Thin Film Stabilization

机译:使用硫醇-点击化学法对功能化聚噻吩进行表面接枝以稳定薄膜

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摘要

Regioregular poly[(3-hexylthiophene)-ran-(3-undecenylthiophene)] (pP3HT) and-Vinyl terminated poly(3-hexylthiophene) (xP3HT) were synthesized by the McCullough method and surface grafted to thiol modified silicon dioxide wafers using thiol-ene click chemistry. Utilizing this method, semiconducting, solvent impervious films were easily generated. thiol-ene click chemistry is convenient for film stabilization in electronics because it does not produce side products that could be inimical to charge transport in the active layer. It was found through grazing incidence wide-angle X-ray scattering (GIWAXS) that there is no change in microstructure between as-spun films and thiol-ene grafted films, while there was a change after the thiol-ene grafted film was exposed to solvent. Organic field-effect transistors (oFETs) were fabricated from grafted films that had been swelled with chloroform, and these devices had mobilities on the order of 10(-6) cm(2) V-1 s(-1), which are consistent with poly(thiophene) monolayer devices.
机译:区域规则的聚[(3-己基噻吩)-ran-(3-十一碳烯基噻吩)](pP3HT)和乙烯基封端的聚(3-己基噻吩)(xP3HT)通过McCullough方法合成,并使用巯基将其表面接枝到巯基改性的二氧化硅晶片上-ene单击化学。使用这种方法,很容易生成半导体,不透溶剂的薄膜。硫醇-烯点击化学便于电子中的薄膜稳定化,因为它不会产生可能对活性层中的电荷传输无害的副产物。通过掠入射广角X射线散射(GIWAXS)发现,初纺膜和硫醇-烯接枝膜之间的微观结构没有变化,而硫醇-烯接枝膜暴露于X射线照射后发生了变化。溶剂。有机场效应晶体管(oFET)由已用氯仿溶胀的接枝膜制成,这些器件的迁移率约为10(-6)cm(2)V-1 s(-1),这是一致的与聚(噻吩)单层设备。

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