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Field Emission Properties of Gold Nanoparticle-Decorated ZnO Nanopillars

机译:纳米金修饰的ZnO纳米柱的场发射特性

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The structural and optoelectronic properties of ZnO nanopillars (ZnO-NPs) grown on Si substrates by the vapor transport deposition method were investigated. In particular, by varying the deposition duration and hence the morphology of the vertically aligned ZnO-NPs, the resultant field emission characteristics were systematically compared. In addition to identifying the advantageous field emission properties exhibited in the pencil-like ZnO-NPs, we observed that by adhering Au nanoparticles on the surface of the ZnO-NPs the turn-on field and the maximum current density can be drastically improved from 3.15 V/μm and 0.44 mA/cm~2 at 5 V/μm for the best ZnO-NPs to 2.65 V/μm and 2.11 mA/cm~2 at 5 V/μm for Au/ZnO-NPs, respectively. The enhancement of field emission characteristics that resulted from Au-nanoparticle decoration is discussed on the basis of charge-transfer-induced band structure modifications.
机译:研究了通过气相沉积法在Si衬底上生长的ZnO纳米柱(ZnO-NPs)的结构和光电性能。特别是,通过改变沉积时间和垂直排列的ZnO-NPs的形貌,系统地比较了所得的场发射特性。除了确定在铅笔状ZnO-NPs中表现出的有利的场发射特性外,我们还观察到,通过将Au纳米颗粒粘附在ZnO-NPs的表面上,可以将开孔场和最大电流密度从3.15大大提高。最佳ZnO-NP在5 V /μm时的V /μm和0.44 mA / cm〜2到Au / ZnO-NP在5 V /μm时分别为2.65 V /μm和2.11 mA / cm〜2。在电荷转移引起的能带结构修饰的基础上,讨论了金纳米粒子修饰导致的场发射特性的增强。

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