Narrow graphene nanoribbon-carbon nanotube (GNR-CNT) stacks were prepared by the plasma unzipping of single-wall carbon nanotubes (SWCNT). A mix-and-match method was developed for the fabrication of nanosized devices in a microsized chip, and the optoelectronic properties of highly sensitive back-gated field-effect phototransistors (FETs) based on the GNR-CNT stack were evaluated. The photoresponse of the representative phototransistors improved near the Dirac point voltage for flat and thick long channels, with an ultrahigh spectral response of 10-50 A W-1 using over wavelength measurement at room temperature. The channel current of FETs decreased from 10(-11) A to 10(-15) A with the decrease in temperature, indicating the semiconducting potential of stacks. Because of the high spectral response of GNR-CNT stacks, they can be used as the optical elements in nanosized photoelectric devices such as phototransistors. (C) 2016 Elsevier Ltd. All rights reserved.
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机译：通过单壁碳纳米管（SWCNT）的等离子体解压缩制备了窄石墨烯纳米带-碳纳米管（GNR-CNT）堆栈。开发了一种混合匹配方法，用于在微尺寸芯片中制造纳米器件，并评估了基于GNR-CNT叠层的高灵敏背栅场效应光电晶体管（FET）的光电性能。对于平坦和较厚的长通道，代表性的光电晶体管的光响应在Dirac点电压附近得到了改善，在室温下通过超波长测量，具有10-50 A W-1的超高光谱响应。随着温度的降低，FET的沟道电流从10（-11）A降低到10（-15）A，表明堆叠的半导体电势。由于GNR-CNT叠层的高光谱响应，它们可用作纳米尺寸光电器件（如光电晶体管）中的光学元件。 （C）2016 Elsevier Ltd.保留所有权利。
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