Ion-implantation-assisted electrochemical nanostructuring of GaP for optoelectronic applications

摘要

High-quality nanoporous layers and free-standing membranes of gallium phosphide have been fabricated by using MeV-ion-implantation assisted electrochemical etching. They were found to exhibit ultraviolet luminescence, Frohlich-type surface-related vibrations and enhanced nonlinear optical response. The obtained results are discussed in connection with various possible applications of nanoporous structures.