Direct characterizations of GaN lattice-polarity and its applications by atomic-resolution high-voltage electron microscopy

摘要

We succeeded in directly characterizing GaN lattic-polarity by atomic-resolution high-voltage electron microscopy(ARHVEM). By the use of the method, we characterized the structural properties of MBE-grown GaN films with different lattice-polarity. It is clear that inversion domains in the film give great negative influences on the film qualities. Furthermore, the mechanism of the inverse of the lattice-polarity by In-irradiation during the growth was studied by ARHVEM observations.