Crystal growth and characteristics of GaN-based LEDs on Si substrates

摘要

We report characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si(111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al{sub}0.27G{sub}0.73N/AlN intermediate layers. The LED on Si showed on operating voltage of 7V, a series resistance of 100 Ω, an optical output power of 20 mΩ, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current.