Low-k organic polymer deposition technique and its application with plasma polymerization method

摘要

Plasma polymerization method is developed for deposition of divinely siloxane bis-benzicyclobutene (BCB), as low-k organic material, with low dielectric constant and high thermal stability. The thermal stability of Plasma-polymerized BCB (p-BCB) polymer is improved over 400℃, the dielectric constant also improved k=2.6. Barrier-metal-free (BMF), Cu dual-damascene interconnects are fabricated in the p-BCB polymer film, which is featured by the anti-diffusive characteristics for the Cu. The BMF-structure has lower inter-line capacitance, keff = 3.1, and higher operation speed than a conventional barrier-inserted structure, about 20%. The BMF-structure also derives Cu-epi-contacts, reducing the via-resistance of 50% to the conventional Cu/barrier/Cu contacts. The via-resistance with the structure will be achieved under 1 Ω/via in the 0.1 μm generations.