Analysis of Interface Property of SiGe-On-Insulator (SGOI) Substrate with a Strained-Si Layer for Nano-CMOS Device Applications

摘要

The effects of heat treatment on the electrical properties of strained-Si SiGe-on-insulator (SGOI) substrate as well as silicon-on-insulator (SOI) were examined. Furthermore, we proposed the optimized heat treatment processes for improving the interface properties of SGOI substrate and the electrical characteristics of SGOI MOSFET with a strained-Si channel. Both pre-rapid thermal process (RTF) and post-RTA annealing (PRA) are inevitable to obtain enhanced DC characteristics in strained Si SGOI n-MOSFET.