Key Technology Development for EUVL Mask Fabrication

摘要

For the successful implementation of EUV lithography technology, defect-free high-reflectivity mask fabrication is one of the key issues. Due to the unique absorbing characteristics of EUV wavelength, EUV lithography system adopts reflective optics and the multilayer structure with half-wavelength period is the only possible reflecting solution. But this multilayer structure causes several technical burdens in many processing steps including deposition, defect inspection, defect repair and cleaning. This paper presents the research results related to these critical issues.