Low-temperature DRAM process for high performance system LSI with high-density embedded memory

摘要

We developed low-temperature DRAM cell process below 600℃ in order to develop the high performance system LSI with high-density embedded memory. The degradation of transistor performance caused by the dopant deactivation can be suppressed when thermal budget after transistor formation is under 600℃. Since our DRAM employed tungsten poly-metal dual work function transistor and low-temperature process (600℃), the above system LSI can be developed without the additional process.