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Molecular dynamics simulation of shearing deformation process of silicon nitride single crystal

机译:氮化硅单晶剪切变形过程的分子动力学模拟

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Shear deformation properties of α and β silicon nitride single crystals are investigated using the classical molecular dynamics (CMD) method. Four cases of shearing directions are analyzed, which were reported to be slip system on the basis of experimental observations. The simulation results show that shear deformation does not occur in one of the experimentally predicted slips (α-{1(1-bar)01} <11(2-bar)0>). In this case the crystal is broken abruptly under shear deformation. In the case of the β crystal (β-{1010} <0001>), a sharp slip with edge dislocation can be found. The dislocation core width and speed are estimate. Finally one of the CMD results is compared with the corresponding first principle density functional calculation results, and it is shown that the validity about shearing CMD simulation of the 3-body interatomic potential was proposed by Vashishta.
机译:使用经典分子动力学(CMD)方法研究了α和β氮化硅单晶的剪切变形特性。分析了四个剪切方向的情况,根据实验观察,它们被报告为滑动系统。仿真结果表明,在实验预测的滑移之一(α-{1(1-bar)01} <11(2-bar)0>)中不会发生剪切变形。在这种情况下,晶体在剪切变形下突然破裂。在β晶体(β-{1010} <0001>)的情况下,会发现边缘错位的急剧滑动。估算位错核心的宽度和速度。最后,将其中一个CMD结果与相应的第一原理密度泛函计算结果进行了比较,结果表明,Vashishta提出了对三体原子间电势的剪切CMD模拟的有效性。

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