A process for the preparation of single crystals made of gallium nitride and silicon single crystals produced by this method

• 1. 一种大尺寸氮化镓单晶生长设备及大尺寸体块氮化镓单晶的生长方法 [P] . 中国专利： CN112553692A . 2021-03-26
• 2. 掺镓元素太阳能硅单晶的生产方法 [P] . 中国专利： CN100494511C . 2009.06.03
• 3. A process for the preparation of single crystals made of gallium nitride and silicon single crystals produced by this method [P] . 德国专利： DE2624958C3 . 1980-09-25

  机译： 一种由氮化镓和通过这种方法生产的硅单晶制成的单晶的制备方法

• 4. A process for the preparation of single crystals made of gallium nitride and silicon single crystals produced by this method [P] . 德国专利： DE2624958B2 . 1980-01-31

  机译： 一种由氮化镓和通过这种方法生产的硅单晶制成的单晶的制备方法

• 5. Method for producing a crystal growth method and the single crystal gallium nitride substrate of a single crystal gallium nitride substrate and the single-crystal gallium nitride [P] . 日本专利： JP3801125B2 . 2006-07-26

  机译： 晶体生长方法的制造方法以及单晶氮化镓基板和单晶氮化镓的单晶氮化镓基板

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