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Anti-atmospheric resistance of ceramics and metals joints -effect of sulfuric acid solution on fracture strength of silicon nitride ceramics nickel joints

机译:陶瓷和金属接头的耐大气性-硫酸溶液对氮化硅陶瓷镍接头断裂强度的影响

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摘要

The nickel metal joined to silicon nitride ceramics using silver-copper-titanium brazing and titanium filler was placed In a sulfuric acid solution at 323K for up to 214 hours. Joining strengths were measured by the 4-point bending test. Microstructures of the reaction layer and porous layer were investigated with a scanning electron microscopy and an electron probe microanalyzer. Fracture strength of the normal joint was 245 MPa before soaking and decrease to 17O MPa after 16 hours and to 100 MPa after 144 hours in 1N-H{sub}2SO{sub}4. Three regions were observed on the fracture surface; the region I at the reaction layer/brazing layer interface, the region II at the bonding interface neighborhood in porous layers (in silicon nitride) and the region III at the silicon nitride/reaction layer interface. As a result of electron probe microanalysis of the porous layer on the nickel-side fracture surface, the silicon and nitrogen were detected with high intensity, however, the intensities of yttrium, aluminium and oxygen were low. These results suggest that yttrium-oxide and aluminium-oxide elute as the sintering aid in the grain boundary of silicon nitride. The growth of the porous layers occurred on the joint surface of silicon nitride ceramics with different roughness due to the ground surface roughness of the test piece. In addition, the wedgeshaped porous layers were fromed a residual stress on the interfacial side of the silicon nitride ceramics joints.
机译:使用银铜钛钎焊将钛金属与氮化硅陶瓷接合,然后将钛填料放在323K的硫酸溶液中放置214个小时。通过四点弯曲试验测量接合强度。用扫描电子显微镜和电子探针显微分析仪研究反应层和多孔层的微观结构。在1N-H {sub} 2SO {sub} 4中,正常关节的断裂强度在浸泡前为245 MPa,在16小时后降至17O MPa,在144小时后降至100 MPa。在断裂面上观察到三个区域。反应层/钎焊层界面处的区域I,多孔层(在氮化硅中)在键合界面附近的区域II和氮化硅/反应层界面处的区域III。对镍侧断裂面的多孔层进行电子探针显微分析的结果是,高强度地检测到硅和氮,但是钇,铝和氧的强度低。这些结果表明,氧化钇和氧化铝被洗脱作为氮化硅晶界中的烧结助剂。由于试片的地面粗糙度,在具有不同粗糙度的氮化硅陶瓷的接合表面上发生多孔层的生长。另外,楔形多孔层是由氮化硅陶瓷接头的界面侧的残余应力引起的。

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