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CIGS Solar Cell - The Development of Cd-Free Buffer Layer Materials and Process Technology

机译:CIGS太阳能电池-无镉缓冲层材料和工艺技术的发展

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摘要

The development of Cd-free buffer layer is one of the most important topics for the evolution of CIGS solar cell. Nowadays, the CdS is typically used as buffer layer in high efficiency CIGS solar cell. However, Cd is very toxic and makes great impact to our environment. To reduce the usage of Cd and keep the high efficiency of CIGS solar cell for the commercializing demand, a lot of effort has been done for the exploration of Cd-free buffer layer. In this article, we introduced the main functions of buffer layer in CIGS solar cell and the technological challenges on buffer layer deposition for mass production. Three potential candidate ZnS, In_2S_3 and Zn_(1-x)Mg_xO to replace the CdS buffer layer and their corresponding deposition technologies such as sputter, evaporation and ALD were discussed.
机译:无镉缓冲层的发展是CIGS太阳能电池发展的最重要主题之一。如今,CdS通常用作高效CIGS太阳能电池的缓冲层。但是,镉的毒性很大,对我们的环境影响很大。为了减少Cd的使用并保持CIGS太阳能电池的高效率以满足商业化的需求,人们为探索无Cd缓冲层做了很多努力。在本文中,我们介绍了CIGS太阳能电池缓冲层的主要功能以及大规模生产缓冲层沉积的技术挑战。讨论了三种潜在的候选ZnS,In_2S_3和Zn_(1-x)Mg_xO代替CdS缓冲层,并讨论了其相应的沉积技术,如溅射,蒸发和ALD。

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