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Comparison of two O(N) methods for total-energy semi-empirical tight-binding calculation

机译:两种O(N)方法用于总能量半经验紧束缚计算的比较

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摘要

We compare two O(N) methods, to calculate the total energy of a system, based on a local evaluation of the density matrix (DM) via the Lanczos-Haydock recursion scheme. We have recently introduced the first method, in which an approximated DM is directly computed from the local tridiagonalized hamiltionian (LTH). In the second method, the DM is obtained from the diagonalized LTH without any further approximation. The use of the first method is restricted to temperatures higher than 1000 K, but there is no limitation for the second one. The methods are compared when applied to a grain boundary in silicon and germanium.
机译:我们比较两种O(N)方法,以通过Lanczos-Haydock递归方案对密度矩阵(DM)进行局部评估,以计算系统的总能量。最近,我们引入了第一种方法,其中直接从局部三对角线化的哈密顿算子(LTH)计算近似的DM。在第二种方法中,DM是从对角化的LTH中获得的,而无需任何进一步的近似。第一种方法的使用仅限于高于1000 K的温度,但第二种方法没有限制。将这些方法应用于硅和锗的晶界时进行了比较。

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