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首页> 外文期刊>Computational Materials Science >First-principles calculation of the band structure, electronic states, and optical properties of Cr-doped ZnS double-wall nanotubes
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First-principles calculation of the band structure, electronic states, and optical properties of Cr-doped ZnS double-wall nanotubes

机译:掺杂Cr的ZnS双壁纳米管的能带结构,电子态和光学性质的第一性原理计算

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The density functional theory (DFT) and generalized gradient approximation plus U (GGA+U) are adopted to investigate the effects of chromium (Cr) doping on the band structure, density of states (DOS), dielectric functions, and optical absorption of (4,4)@(m, m) (m = 6, 7, 8) double-wall zinc sulfide nanotubes (DW-ZnSNTs). Cr doping is found to produce half-metallic features in the DW-ZnSNTs and the band gaps of the minority spin are expanded for (4,4)@(6,6) DW-ZnSNTs, while they are reduced for (4,4)@(7, 7) and (4,4)@(8,8) DW-ZnSNTs. When Cr is doped in the double-wall nanotubes, both the static dielectric constants and static refractive index are increased, but the maximum values of the real and imaginary parts of the dielectric functions, the maximum extinction coefficients, the maximum refractive index and extinction coefficient are decreased slightly. Compared to the pristine ones, the absorption peaks of Cr doped (4,4)@(m, m) DW-ZnSNTs are reduced a little and new peaks appear in the ultraviolet region. If the separation between adjacent walls is increased, light absorption is enhanced but the effects of Cr doping decrease due to the reduced interactions between the inner and outer nanotubes. The results illustrate that the electronic and optical properties of ZnS nanotubes can be improved by metal doping, which is expected to expedite the use of the materials in applications, such as, ultraviolet light-emitting diodes, flat panel displays, and photocatalysis. (C) 2015 Elsevier B.V. All rights reserved.
机译:采用密度泛函理论(DFT)和广义梯度近似加U(GGA + U)来研究铬(Cr)掺杂对(b)的能带结构,态密度(DOS),介电函数和光吸收的影响4,4)@(m,m)(m = 6,7,8)双壁硫化锌纳米管(DW-ZnSNTs)。发现Cr掺杂在DW-ZnSNTs中产生半金属特征,少数自旋的带隙对于(4,4)@(6,6)DW-ZnSNTs扩大,而对于(4,4)减少)@(7,7)和(4,4)@(8,8)DW-ZnSNTs。当Cr掺杂在双壁纳米管中时,静态介电常数和静态折射率都增加,但是介电函数的实部和虚部的最大值,最大消光系数,最大折射率和消光系数略有下降。与原始相比,Cr掺杂的(4,4)@(m,m)DW-ZnSNTs的吸收峰减少了一点,并且在紫外区域出现了新的峰。如果增加相邻壁之间的间隔,则可以增加光吸收,但是由于内部和外部纳米管之间相互作用的减少,Cr掺杂的影响会降低。结果表明,通过金属掺杂可以改善ZnS纳米管的电子和光学性能,这有望加快该材料在紫外发光二极管,平板显示器和光催化等应用中的使用。 (C)2015 Elsevier B.V.保留所有权利。

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