Ultrahigh-Speed Integrated Circuits using InP-Based Resonant Tunneling Diodes

摘要

Resonant tunneling diodes (RTDs) are attracting much attention because of their potential for high-speed operation as well as for high functionality due to the negative differential resistance (NDR). RTDs are regarded as a most practical quantum effect devices for ultrahigh-speed analog and digital applications in the near future. In this paper we will discuss the InP-based RTD/HEMT integrated circuits for ultrahigh-speed applications.