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Integrated asymmetric resonant tunneling diode pair circuit

机译:集成非对称谐振隧穿二极管对电路

摘要

Presented is an integrated asymmetric resonant tunneling diode pair circuit exhibiting current-voltage characteristics providing multistable states which may be tailored for multistable solutions. Also presented are apparatus incorporating the invention therein, for which the invention provides a simple, integrated design that greatly reduces circuit complexity and size. The present invention is useful in all applications utilizing multiple peak characteristics of the current-voltage curve, such as multiple-valued logic analog-to-digital quantizers, frequency multiplication devices, waveform scrambling devices, memory operations, and parity-bit generation, among others.
机译:提出了一种集成的非对称谐振隧穿二极管对电路,该电路具有电流-电压特性,可提供可用于多稳态解决方案的多稳态。还提出了在其中结合了本发明的设备,为此,本发明提供了一种简单的,集成的设计,大大降低了电路的复杂性和尺寸。本发明在利用电流-电压曲线的多个峰值特性的所有应用中都是有用的,例如多值逻辑模数量化器,倍频设备,波形加扰设备,存储器操作和奇偶校验位生成。其他。

著录项

  • 公开/公告号US6303941B1

    专利类型

  • 公开/公告日2001-10-16

    原文格式PDF

  • 申请/专利权人 HRL LABORATORIES;

    申请/专利号US19990427196

  • 申请日1999-10-25

  • 分类号H01L290/60;

  • 国家 US

  • 入库时间 2022-08-22 01:03:03

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