A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates

O.G. Koshelev

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A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates

机译：微波法测定合金化硅板整体和表面非平衡电荷载体的复合率

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摘要

A method of determining the life-time of nonequilibrium carriers and the rate of surface recombination in a silicon plate readily absorbing microwaves is considered. The method is based on a simultaneous measuring of the photoconductivity relaxation time by transmission and reflection of the microwave.

机译：考虑了一种确定不平衡载体的寿命和容易吸收微波的硅板中的表面复合速率的方法。该方法基于通过微波的透射和反射来同时测量光电导弛豫时间。

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《Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов》 |2000年第10期|共3页
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O.G. Koshelev;
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1. A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates [J] . O.G. Koshelev Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов . 2000,第10期

机译：微波法测定合金化硅板整体和表面非平衡电荷载体的复合率
2. A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates [J] . O.G. Koshelev Заводская лаборатория: Ежемес.науч.-техн. журн. по аналит. химии, физ., мат. и мех. методам исслед. материалов . 2000,第10期

机译：用于测定散装中非纤维电荷载体的重组率和合金硅板表面的微波方法
3. A microwave method for determination of the recombination rate of nonequilibrium charge carriers in the bulk and at the surface of doped silicon wafers [J] . O. G. Koshelev Industrial Laboratory: Diagnostics of Materials . 2000,第10期

机译：微波法测定掺杂硅片整体和表面非平衡电荷载流子的复合率
4. Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay (μ-PCD) Coupled with Continuous Corona Charge (Charge-PCD) [C] . T. Pavelka, A. Pap, P. Kenesei, Analytical techniques for semiconductor materials and process characterization 6(ALTECH 2009) . 2009

机译：微波光导衰减（μ-PCD）与连续电晕电荷（Charge-PCD）耦合用于测量少数载流子寿命的硅表面制备方法的比较
5. THE DETERMINATION OF ACTIVITIES AND REACTION RATES IN ALLOY MELTS BY MASSSPECTROMETRIC METHODS: IRON - VANADIUM, COPPER - ALUMINUM, IRON - SILICON, COPPER - SILICON AND IRON - SULFUR - OXYGEN. [D] . WEIDNER, CLARENCE WARREN, JR. 1971

机译：质谱法测定合金熔体的活性和反应速率：铁-钒，铜-铝，铁-硅，铜-硅和铁-硫-氧。
6. Methods for testing Zernike phase plates and a report on silicon-based phase plates with reduced charging and improved ageing characteristics [O] . Michael Marko, Xing Meng, Chyongere Hsieh, -1

机译：Zernike相板的测试方法以及有关减少充电和改善老化特性的硅基相板的报告
7. A method to separate bulk lifetime and surface recombination velocity of silicon bricks based on transient photoluminescence [O] . Wang, K, Kampwerth, H 2014

机译：基于瞬态光致发光的硅砖体寿命和表面复合速度分离方法
8. Determination of surface recombination velocity and bulk lifetime in detector grade silicon and germanium crystals. [R] . Derhacobian, N., Fine, P., Walton, J. T., 1993

机译：检测器级硅和锗晶体中表面复合速度和体积寿命的测定。

A Microwave Method for Determination of the Recombination Rate of Nonequilibrium Charge Carriers in the Bulk and on the Surface of Alloyed Silicon Plates

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