Preparation and optical absorption of electrodeposited or sputtered, dense or porous nanocrystalline CuInS2 thin films

摘要

Copper indium disulphide thin films were obtained by one-step deposition with two different techniques. Films are synthesised by electrodeposition using a single electrolytic bath and by r.f. sputtering using a single target. Deposition rates were about 75 nm/min and 2.5—6.5 nm/min, respectively. Electrodeposited films have rough and porous surfaces, with no preferential orientation. Smooth or particle-covered surfaces were observed for sputtered films with a highly (112)-oriented chalcopyrite structure. Absorption coefficients calculated from transmittance spectra have high values in visible range. Electrodeposited samples present higher absorption coefficients on a larger wavelength range. A relationship between morphology and optical properties was found; absorption coefficients increase with porosity and roughness of the films. Band gap values of about 1.3 eV for electrodeposited and 1.5 eV for sputtered thin films were calculated.