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Simulation of Nanoindentation into Hard Thin Film on Soft Substrate

机译:在软基底上纳米压痕形成硬薄膜的模拟

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摘要

Mechanical response of hard thin films on soft substrates subjected to indentation was investigated using finite element method (FEM), The load-displacement curves for different indentation depth were computed to calculate film hardness based on the Oliver-Pharr method. It was found that the indentation depth should be smaller than 6% of film thickness in order to neglect the influence of substrate. FEM results showed that the calibration of the coefficient of elastic displacement of the film surface at the contact was essential to improve the accuracy of the deduced value of film hardness at such a small indentation depth. Energy studies implied that the unloading process was not purely elastic. The yielding of the substrate resulted in not only an augmented value of the maximum displacement but also an overestimated value of contact stiffness in the Oliver-Pharr method. Both resulted in underestimation of film hardness.
机译:采用有限元方法(FEM)研究了压痕对软质基材上硬质薄膜的力学响应,并基于Oliver-Pharr法计算了不同压痕深度的载荷-位移曲线,计算了薄膜的硬度。已发现压痕深度应小于膜厚度的6%,以便忽略基板的影响。有限元分析结果表明,在如此小的压痕深度下,对接触时膜表面弹性位移系数的校准对于提高膜硬度推导值的精度至关重要。能源研究表明,卸载过程并非纯粹是弹性的。基材的屈服不仅导致最大位移的增加值,而且导致Oliver-Pharr方法中的接触刚度的高估值。两者均导致膜硬度的低估。

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