TCAD Simulation for Virtual Design of Semiconductor Processes

摘要

The development time for new semiconductor devices is becoming longer, accompanying the shrinkage of design rules, strict process specifications, and increase in the number of process steps. In order to reduce the development time, a decrease in the number of experiments is strongly desired. Technology CAD (TCAD) is one possible candidate to improve the efficiency of development by simulating processes virtually. However, topography simulation, one part of TCAD, has not been widely used due to its inability to deal with complex chemical reactions. Toshiba has therefore been developing new topography simulation models based on plasma diagnosis and surface analysis. We have been successfully applying these models to semiconductor processes to reduce the development time.