BaAl{sub}2S{sub}4:Eu thin film electroluminescent devices prepared by conventional electron beam evaporation method

摘要

BaAl{sub}2S{sub}4:Eu thin films were prepared by conventional electron beam evaporation method. Substrate temperature and post-annealing condition were investigated for BaAl{sub}2S{sub}4:Eu thin films. The films showed blue photoluminescence with a peak around 470 nm. Furthermore thin film electroluminescent devices showed pure blue emission. The CIE color coordinate is (x=O.12 Y=O.11). Maximum luminance was 200cd/m{sub}2 under 1kHz sinusoidal wave voltage.