BaAl_2S_4:Eu Thin-Film EL Devices Prepared by Pulsed Laser Ablation Technique

摘要

BaAl_2S_4:Eu phosphor is the most promising material as the blue emitting thin film electroluminescent (TFEL) devices. We reported the BaAl_2S_4:Eu TFEL devices which were prepared by the two-targets-pulse electron beam evaporation technique. The BaAl_2S_4:Eu TFEL devices shown a high luminance of 65 cd/m~2 under driving 50 Hz pulse voltage and the CIE color coordinates was (X=0.12 and Y=0.10). BaAl_2S_4:Eu phosphor is composed of elements which have different vapor pressure. Therefore deposition of these multinaly compound thin films is difficult. We think that flash evaporation technique, pulsed laser ablation (PLA) technique and two-targets-pulse electron beam evaporation technique solved this problem. These deposition techniques supply to momentary energy for the target. There is a few report of BaAl_2S_4:Eu blue emitting TFEL devices. In this study, we were prepared the BaAl_2S_4:Eu blue emitting TFEL devices by the PLA technique. Generally, the thin films that were ablated by the PLA technique are expected to high quality and stoichiometric composition with keeping the composition of starting materials. ZnS:Mn and SrS:Ce TFEL devices had been prepared by the PLA technique were reported.