Antiferromagnetie FeMn films have been extensively investigated as pinning layers of spin valves [1-7]. Blocking temperature was reported from 150℃ to 192℃ and exchange field from few tens to 300 Oe depending on magnetic films used and annealing conditions. In many cases, the spin valves are exposed to high temperatures during the manufacturing process. Therefore, the study of developing high temperature endurable and high exchange field materials has led to IrMn or PtMn pinned spin valve films. In this paper, we report enhancement of thermal stability for sputter deposited FeMn spin valves by rapid thermal annealing (RTA). Reduced MR and H{sub}ex of spin valves by high temperature annealing can be recovered after RTA with applied magnetic field.
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