Recently, several spintronic devices based on silicon (Si) have been demonstrated at room temperature1-3. For the practical use of these devices, in addition to the enhancement of spin polarization in Si, investigation of thermal endurance is necessary because thermal annealing has a variety of possible effects on spintronic devices. There has not been reported about endurance to post-fabrication annealing of the spintronic devices based on nondegenerate Si. Here, we studied the effects of thermal annealing on nondegenerate Si-based lateral spin-valve devices.
展开▼
