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Correlation between Preferred Orientation and Pinhole Defect of TiN Films by Ion Mixing and Vapor Deposition Technique

机译:离子混合和气相沉积技术对TiN薄膜择优取向与针孔缺陷的相关性

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摘要

Titanium nitride (TiN)a films were prepared onto stainless steels by nitrogen ion irradiation during titanium vapor deposition, i.e., ion mixing and vapor deposition (IVD) technique. The influence of preparation conditions on surface morphology, preferred orientation and micro structure of TiN films were investigated. The TiN films with preferred orientation of {111} or {100} plane were characterized by the respective appearance of triangular or grainy crystals, which were strongly dependent of preparation conditions. The area ratio of pinhole defects in the TiN films evaluated by electrochemical measurement successfully decreased with the orientation of plane preferring {100}. On the contrary, they increased with the orientation of plane preferring {111}. Here, the correlation between preferred orientation and pinhole defect of TiN films was discussed with the optimum preparation conditions for the corrosion-protective dry coating films.
机译:通过在钛气相沉积过程中通过氮离子辐照,即离子混合和气相沉积(IVD)技术,在不锈钢上制备氮化钛(TiN)a膜。研究了制备条件对TiN薄膜表面形貌,择优取向和微观结构的影响。具有优选的{111}或{100}面取向的TiN膜的特征在于三角形或粒状晶体的各自外观,其强烈地取决于制备条件。通过电化学测量评估的TiN薄膜中针孔缺陷的面积比随着面取向的{100}成功降低。相反,它们随着平面的取向而优选{111}而增加。在此,以防腐干膜的最佳制备条件为基础,讨论了TiN膜的择优取向与针孔缺陷之间的关系。

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