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Correlation between Preferred Orientation and Pinhole Defect of TiN Films by Ion Mixing and Vapor Deposition Technique

机译:离子混合和气相沉积技术锡膜优选取向与针孔缺损的相关性

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摘要

Titanium nitride (TiN)a films were prepared onto stainless steels by nitrogen ion irradiation during titanium vapor deposition, i.e., ion mixing and vapor deposition (IVD) technique. The influence of preparation conditions on surface morphology, preferred orientation and micro structure of TiN films were investigated. The TiN films with preferred orientation of {111} or {100} plane were characterized by the respective appearance of triangular or grainy crystals, which were strongly dependent of preparation conditions. The area ratio of pinhole defects in the TiN films evaluated by electrochemical measurement successfully decreased with the orientation of plane preferring {100}. On the contrary, they increased with the orientation of plane preferring {111}. Here, the correlation between preferred orientation and pinhole defect of TiN films was discussed with the optimum preparation conditions for the corrosion-protective dry coating films.
机译:在钛气相沉积期间,通过氮离子照射制备氮化钛(锡)薄膜在不锈钢上,即离子混合和气相沉积(IVD)技术。 研究了制备条件对表面形态,优选取向和微结构的锡膜的影响。 具有{111}或{100}平面的优选取向的锡膜的特征在于三角形或颗粒状晶体的相应外观,这均依赖于制备条件。 通过电化学测量评价的锡膜中针孔缺陷的面积比成功地降低了平面偏好{100}的方向。 相反,它们随着平面偏好{111}的方向而增加。 这里,用耐腐蚀性干涂膜的最佳制备条件讨论了锡膜优选取向和针孔缺陷的相关性。

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