Studies on the thermal stability of nano-SiC powder with excessive free carbon by TG-DTA-MS, XRD and TEM

Hui-Mei Y; Chang-Wei L; Ling-Jun Q; Hua-Qing X; Tong-Geng X; Lan L

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Studies on the thermal stability of nano-SiC powder with excessive free carbon by TG-DTA-MS, XRD and TEM

机译：TG-DTA-MS，XRD和TEM研究游离碳过多的纳米SiC粉体的热稳定性

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We studied the removal process of excessive free carbon in the nano-SiC powder by TG-DTA-MS, XRD and TEM three methods. The studies showed that the temperature of removing excessive free carbon in the nano-SiC powder should be about 750 degrees C in air.

机译：通过TG-DTA-MS，XRD和TEM三种方法研究了纳米SiC粉体中过量游离碳的去除方法。研究表明，去除空气中纳米SiC粉末中过量游离碳的温度应约为750摄氏度。

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来源
《Journal of thermal analysis and calorimetry》 |2006年第3期|共4页
作者
Hui-Mei Y; Chang-Wei L; Ling-Jun Q; Hua-Qing X; Tong-Geng X; Lan L;
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正文语种 eng
中图分类分析化学;
关键词
nano-SiC powder; TEM; TG-DTA-MS; thermal stability; XRD;

机译：纳米SiC粉;TEM;TG-DTA-MS;热稳定性;XRD;

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机译：TG-DTA-MS，XRD和TEM研究游离碳过多的纳米SiC粉体的热稳定性
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Studies on the thermal stability of nano-SiC powder with excessive free carbon by TG-DTA-MS, XRD and TEM

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