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首页> 外文期刊>Journal of Undergraduate Chemistry Research >FABRICATION OF A RETINAL PROSTHETIC TEST DEVICE USING ELECTRODEPOSITED SILICON OVER POLYPYRROLE PATTERNED WITH SU-8 PHOTORESIST
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FABRICATION OF A RETINAL PROSTHETIC TEST DEVICE USING ELECTRODEPOSITED SILICON OVER POLYPYRROLE PATTERNED WITH SU-8 PHOTORESIST

机译:在SU-8光刻胶上的聚吡咯上使用电沉积硅制造视网膜假体测试装置

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A materials fabrication study of a photodiode array for possible application of retina prosthesis was undertaken. A test device was fabricated using a glassy carbon electrode patterned with SU-8 photoresist. In the openings, p-type polypyrrole was first electrodeposited using 1-butyl-1-methylpyridinium bis(trifluoromethylsulfonyl)imide ionic liquid. The polypyrrole was self-doped with imide ion at -1.5 mole %, was verified as p-type, and had a resistivity of -20 Ωcm. N-type Silicon was then electrodeposited over this layer using silicon tetrachloride / phosphorus trichloride in acetonitrile and passivated in a second electrodeposition using trimethylchlorosilane. Electron microscopy revealed the successful electrodeposition of silicon over patterned polypyrrole. Rudimentary photodiode behavior was observed. The passivation improved but did not completely protect the electrodeposited silicon from oxidation by air.
机译:进行了可能用于视网膜假体的光电二极管阵列的材料制造研究。使用用SU-8光致抗蚀剂图案化的玻璃碳电极制造测试装置。在开口中,首先使用1-丁基-1-甲基吡啶双(三氟甲基磺酰基)酰亚胺离子液体对p型聚吡咯进行电沉积。聚吡咯以-1.5摩尔%的酰亚胺离子自掺杂,被验证为p型,并且具有-20Ωcm的电阻率。然后使用四氯化硅/三氯化磷的乙腈溶液将N型硅电沉积在该层上,并使用三甲基氯硅烷在第二次电沉积中将其钝化。电子显微镜显示成功在图案化的聚吡咯上沉积了硅。观察到基本的光电二极管行为。钝化得到改善,但是不能完全保护电沉积的硅免受空气氧化。

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