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Theoretical simulation of temperature induced increase of quantum yield of minimum chlorophyll fluorescence Phi(F(0))

机译:温度引起的最小叶绿素荧光Phi(F(0))量子产率增加的理论模拟

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The measured minimum chlorophyll fluorescence intensity F-o of barley leaves rises upon linear heating in the temperature range 32-52 degrees C whereas the maximum fluorescence F-M gradually decreases. The rise of Fo is thought to be connected with the blocking of electron transport in the reaction centre of PSII (RCII), however a clear interpretation has not yet been settled. In this paper, we have theoretically simulated both F-M and F-o temperature dependencies in the temperature range 25-60 degrees C based on a monomolecular model. The fluorescence quantum yields Phi(F(o)) and Phi(F(M)) were expressed as functions of the rate constants of the deexcitation processes and the fraction of open RCII [P]. The temperature dependence of the rate constants was expressed by exponential functions (1/T)(1/2) exp(-E-A/RT) or exp(-E-A/RT). A fitting of the F-M dependence served to obtain some yet unknown rate constants. In the temperature interval where the functional RCIIs are supposed to convert gradually into the blocked ones the value [P] was tuned to converge gradually to 0 yielding the increase of Phi(F(o)). The model enabled us to express the theoretical dependencies of quantum yields of internal conversion, intersystem crossing and energy transfer to PSI in reasonable accordance with the known experimental facts. The simulation supports the view that the temperature increase of F-o is predominantly caused by a blocking of RCII. (C) 1998 Academic Press. [References: 30]
机译:在32-52℃的温度范围内线性加热时,测得的大麦叶的最小叶绿素荧光强度F-o升高,而最大荧光F-M逐渐降低。 Fo的上升被认为与PSII(RCII)反应中心中的电子传输受阻有关,但是尚无明确的解释。在本文中,我们从理论上基于单分子模型模拟了F-M和F-o在25-60摄氏度温度范围内的温度依赖性。荧光量子产率Phi(F(o))和Phi(F(M))表示为去激励过程的速率常数和开放RCII的分数的函数[P]。速率常数的温度依赖性由指数函数(1 / T)(1/2)exp(-E-A / RT)或exp(-E-A / RT)表示。 F-M依赖关系的拟合用来获得一些未知的速率常数。在应该将功能性RCII逐渐转变为受阻RCII的温度区间中,将值[P]调整为逐渐收敛至0,从而增加了Phi(F(o))。该模型使我们能够根据已知的实验事实合理地表达内部转换,系统间交叉以及向PSI的能量转移的量子产率的理论依赖性。该模拟支持以下观点,即F-o的温度升高主要是由RCII的阻塞引起的。 (C)1998年学术出版社。 [参考:30]

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