Performance of a silicon monochromator under high heat load

摘要

The performance of a cryogenically cooled double-crystal silicon monochromator was studied under high-heat-load conditions with total absorbed powers and power densities ranging from 8 to 780 W and from 8 to 240 W mm~(-2), respectively. When the temperature of the first crystal is maintained close to the temperature of zero thermal expansion of silicon, the monochromator shows nearly ideal performance with a thermal slope error of 0.6 μrad. By tuning the size of the first slit, the regime of the ideal performance can be maintained over a wide range of heat loads, i.e. from power densities of 110 W mm~(-2) (at total absorbed power of 510 W) to 240 W mm~(-2) (at total absorbed power of 240 W).