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Effects of oxygen plasma treatments on the work function of indium tin oxide studied by in-situ photoelectron spectroscopy

机译:原位光电子能谱研究氧等离子体处理对铟锡氧化物功函数的影响

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摘要

Using UV and X-ray photoelectron spectroscopy (UPS & XPS), we have studied the work function (WF) evolution and chemical changes of an indium-tin-oxide (ITO) surface after a series of in-situ oxygen plasma treatments (OPTs). We took special care not to damage the sample's surface with OPT by employing the weakest possible plasma conditions. Even after such gentle OPT the WF of ITO dramatically increased up to 6.6 eV after about 300 s of OPT. The carbon contamination at the surface was completely removed after only 40 s of the gentle OPT. However, in contrast to similar studies, the compositions and the chemical states of In, Sn, and O at the ITO surface showed only minimal changes as confirmed by XPS core-level peak analyses.
机译:使用紫外和X射线光电子能谱(UPS&XPS),我们研究了一系列原位氧等离子体处理(OPT)后铟锡氧化物(ITO)表面的功函数(WF)演化和化学变化)。我们特别注意不要采用最弱的等离子体条件来使用OPT破坏样品表面。即使经过如此温和的OPT,在经过约300 s的OPT之后,ITO的WF仍会急剧增加至6.6 eV。温和的OPT仅40 s后,表面上的碳污染就被完全清除。但是,与类似的研究相反,通过XPS核心水平峰分析证实,ITO表面的In,Sn和O的组成和化学状态仅显示出最小的变化。

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