首页> 外国专利> METHOD FOR STACKING A MULTI-LAYERED INDIUM-TIN-OXIDE, CAPABLE OF IMPROVING THE ELECTRIC FUNCTION AND THE DISPLAYING FUNCTION OF A MULTI-LAYERED INDIUM-TIN-OXIDE SUBSTRATE

METHOD FOR STACKING A MULTI-LAYERED INDIUM-TIN-OXIDE, CAPABLE OF IMPROVING THE ELECTRIC FUNCTION AND THE DISPLAYING FUNCTION OF A MULTI-LAYERED INDIUM-TIN-OXIDE SUBSTRATE

机译:多层氧化铟锡的堆叠方法,能够改善多层氧化铟锡基质的电功能和显示功能

摘要

PURPOSE: A method for stacking a multi-layered indium-tin-oxide(ITO) is provided to improve the insulating property of the multi-layered ITO by using a photosensitive transparent ink layer as an insulating layer and implementing a photolithography process and an etching process.;CONSTITUTION: Two or more ITO-based layers are coated on glass or a film. Photosensitive transparent ink is applied between the ITO-based layers more than twice. A photolithography process and an etching process are implemented. The edge of a second ITO-based layer(101) is etched in order to improve the insulating property of a multi-layered ITO. Photosensitive transparent-based layers are exposed.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于堆叠多层氧化铟锡(ITO)的方法,以通过使用光敏透明墨水层作为绝缘层并实施光刻工艺和蚀刻来改善多层ITO的绝缘性能。组成:将两个或多个基于ITO的层涂在玻璃或薄膜上。在基于ITO的层之间施加光敏透明油墨两次以上。实施光刻工艺和蚀刻工艺。蚀刻第二基于ITO的层(101)的边缘,以改善多层ITO的绝缘性能。曝光基于光敏性的透明层。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20110051309A

    专利类型

  • 公开/公告日2011-05-18

    原文格式PDF

  • 申请/专利权人 LEE DONG HYEUK;

    申请/专利号KR20090107808

  • 发明设计人 LEE DONG HYEOK;

    申请日2009-11-10

  • 分类号C01G15/00;C01G19/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:51:56

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