Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure

摘要

We report an amelioration of the electrical, thermal and optical performances of green InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with AlGaN/GaN short-superlattice (SSL)-inserted structure grown using metal-organic chemical vapor deposition. According to an atomic force microscopic study, the GaN template with the SSL-inserted structure shows a significant reduction in pit density compared to the conventionally-grown template. The insertion of the SSL is also found to alleviate the effect of threading dislocations on the degradation of the electrical performance and promotes the stability of the K-factor and a low thermal resistance under a long-term acceleration test. A relatively higher optical output power is obtained for SSL-inserted InGaN/GaN green LEDs at high injection currents.