Simulation studies on homojunction LED for gas sensor instrumentation in mid-infrared spectral region

摘要

In this paper, we present ATLAS simulation studies of a PIN homojunction light emitting diode (LED) based on p~+-InAs_(0.91)Sb_(0.09)°-InAs_(0.91)Sb_(0.09)~+-InAs_(0.91)Sb_(0.09) materials system grown on lattice matched p~+-GaSb substrate suitable for use as source in the optical absorption gas spectroscopy in the mid-infrared spectral region at room temperature. The various electro-optical properties of the PIN LED have been evaluated using the ATLAS device simulation software. The output power of the homojunction PIN LED has been computed as a function of bias current under high current injection and found to be in good agreement with the reported experimental results.