ELECTRICAL PROPERTIES OF NaNbO{sub}3 THIN FILMS

摘要

Sodium niobate (NaNbO{sub}3) ceramic targets were prepared using solid state reaction method. The targets were rf sputtered on silicon substrate (p-<100>, 1 Ωcm resistivity). Films were deposited at different temperatures and the room temperature deposited films were post annealed at different temperatures. Current-Voltage (I-V) characteristics were measured in the metal-insulator-semiconductor (MIS) configuration. Leakage current, breakdown voltage and conduction mechanism of the films have been determined from the observed I-V characteristics of the configuration. It has been observed that films annealed at 400℃ and the films deposited at 300℃ show best results required for semiconductor memory devices.